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采用多层异质液相外延技术,制出了具有开关、存储、发光等多种功能的npnp Ga_(1-x)Al_xAs负阻发光二极管。其典型参数为:阈值电压V_(th)5—50V,阈值电流I_(th)<1mA,保持电压Vk～1.8V,保持电流I_k<3mA,反向击穿电压V_B40—100V,反向漏电流I_L<10μA,响应速度τ1～5μs,当使用电流10mA,使用电压～1.8V时,总光通量为2—3mlum。光谱峰值一般在6700A左右,半宽度约为200A。文中,还根据一般晶体管原理和半导体发光原理,综合考虑器件应具有的电学和光学特性,分析了器件各部份的作用,据此设计了器件的能带结构和主要参数,确定了工艺制备条件。最后对实验结果进行了测定与分析。
Multi-layer heterogeneous liquid-phase epitaxy technology was used to fabricate npnp Ga 1-x Al x As negative-resistance LEDs with switching, storage and luminescence functions. The typical parameters are: threshold voltage V_ (th) 5-50V, threshold current I_ (th) <1mA, holding voltage Vk ~ 1.8V, holding current I_k <3mA, reverse breakdown voltage V_B40-100V, reverse leakage current I_L <10μA, the response speed τ1 ~ 5μs, when the use of current 10mA, the use of voltage ~ 1.8V, the total luminous flux of 2-3mlum. The peak value of the spectrum is about 6700A, the half width is about 200A. In this paper, we also consider the electrical and optical characteristics that the device should have based on the principle of general transistor and the light-emitting principle of the semiconductor. The function of each part of the device is analyzed. The energy band structure and the main parameters of the device are designed, and the process conditions . Finally, the experimental results were measured and analyzed.