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一、概述QBD成品率的研究对超薄氧化层的质量评价至关重要，它是MOS电路可靠性的保证。本文的研究对象为Z0nm超薄氧化层的QBD。其中20um氧化层用于1微米工艺中的栅氧，10um氧化层用干E2PROM电路中的隧道氧化。当氧化层较厚时（40nm以上），一般用BVOX、Ilcak等参数来表征氧化层
I. Overview QBD yield studies on the quality of ultra-thin oxide layer is critical, it is the reliability of MOS circuit guarantee. The research object of this paper is QBD of Z0nm ultrathin oxide layer. One 20um oxide layer is used for the gate oxide in the 1 micron process and the 10um oxide layer is oxidized by the tunnel in the dry E2PROM circuit. When the oxide layer is thick (40nm or more), the general use of BVOX, Ilcak and other parameters to characterize the oxide layer