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本文综合报导了第一只缓变基区双极晶体管。这个用MBE技术生长而成的器件有一个宽带隙Al_(0.35)Ga_(0.65)As发射区(n=2×10~(16)/cm~3)和一个厚度为0.4μm,其组分从Al_(0.2)Ga_(0.8)As线性变化到GaAs的p~+(=2×10~(18)/cm~3)基区。观察了该器件集电极特性,直流电流增益为35,曲线平坦,接近理想。缓变带隙基区的引入,由于电子感应的准电场作用,使基区渡越时间变得非常小,这就容许我们选择一个很好的方案来减小基区电阻。
This article comprehensively reports the first slowly changing base bipolar transistor. The device grown by MBE technology has a wide bandgap Al 0.35 Ga 0.65 As emission region (n = 2 x 10 16 / cm 3) and a thickness of 0.4 μm with a composition of The Al_ (0.2) Ga_ (0.8) As linearly changes to the p ~ + (= 2 × 10 ~ (18) / cm ~ 3) base of GaAs. The device collector characteristics were observed, the DC current gain of 35, the curve is flat, close to the ideal. The gradual change of the introduction of the band gap base region, due to the quasi-electric field of the electronic sensing, makes the base transit time very small, which allows us to choose a good solution to reduce the base resistance.