横向电压型压力传感器的几何形状与霍尔器件相同因此也存在有磁敏性.本文用弱场近似的统计理论导出了非均匀掺杂薄层的霍尔电势表式,理论计算与实验结果相当一致.最后,介绍了一种实际上能完全消除磁场对压力传感器影响的方法,得到了很好的结果. The transverse voltage type pressure sensor has the same geometry as the Hall device, so there is magnetism sensitivity.In this paper, the Hall potential equation of the non-uniform doping thin layer is deduced by using the statistical theory of the weak field approximation, the theoretical calculation is in good agreement with the experimental result Finally, a method that virtually eliminates the effect of a magnetic field on the pressure sensor is introduced, and very good results are obtained.