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5. Characterization of different-Al-content AlGaN/GaN heterostructures on sapphire

Characterization of different-Al-content AlGaN/GaN heterostructures on sapphire

来源 :中国科学：物理学、力学、天文学英文版 | 被引量 : 0次 | 上传用户：zhuzubiao

【摘 要】

：

Al x Ga 1-x N/GaN high-electron-mobility transistor (HEMT) structures with Al composition ranging from x = 0.13 to 0.36 are grown on sapphire substrates by low-

【作 者】

：

GuoJian Ding (1) dingguojian@1 

【机 构】

：

ChineseAcadSci

【出 处】

：

中国科学：物理学、力学、天文学英文版

【发表日期】

：

2010年1期

【关键词】

：

ALGAN HALL-EFFECT LUMINESCENCE AlGaNHall-effectluminescence 

【基金项目】

：

Supported by the National Natural Science Foundation of China (Grant No.10574148),the National High-Tech Research and Development Program of China (Grant Nos. 2006AA03A106 and 2006AA03A107),the Nation

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论文部分内容阅读

Al x Ga 1-x N/GaN high-electron-mobility transistor (HEMT) structures with Al composition ranging from x = 0.13 to 0.36 are grown on sapphire substrates by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The effects of Al content on crysta

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