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在双极集成电路工艺中,做完隔离扩散后要检查扩散情况,通常是测两个隔离岛之间的伏安特性。如果外延层扩穿,有几十伏以上硬击穿;如果外延层未扩穿,则隔离墙和P-Si 衬底之间有一距离,隔离岛相通。加电压后,电流先流过未扩穿部分,所以击穿特性有线性段OA(见图1);随着电压的加大,耗尽层扩展、相接和穿通,沟道夹断,出现AB 饱和段;当电压达到雪崩击穿电压时,电流突然上升。
In the bipolar integrated circuit process, after doing the isolation and diffusion to check the proliferation, usually measured volt-ampere characteristics between two isolated islands. If the epitaxial layer is expanded, there are dozens of volts or more of hard breakdown. If the epitaxial layer is not expanded, there is a distance between the barrier and the P-Si substrate and the isolated islands are connected. After the voltage is applied, the current flows through the non-extended portion first, so the breakdown characteristic has a linear section OA (see Figure 1); as the voltage increases, the depletion layer expands, contacts and passes, the channel pinch off, appears AB saturation segment; when the voltage reaches the avalanche breakdown voltage, the current suddenly rises.