采用提拉法生长得到LGS单晶,采用磷酸作腐蚀剂,对LGS晶体做了一系列腐蚀实验。实验结果表明:对于不同方向晶面,腐蚀液的配比和腐蚀时间等条件各不相同。根据腐蚀坑可以判定,其极轴是二次轴[1120]方向,并可具体确定极轴方向。关于腐蚀坑的分布可以判定,在现行条件下生长的晶体具有较高的质量。 The LGS single crystal was grown by the Czochralski method and a series of corrosion experiments were conducted on the LGS crystal using phosphoric acid as etchant. Experimental results show that for different directions of the crystal plane, the ratio of etching solution and etching time and other conditions vary. According to the corrosion pit can be determined, the polar axis is the secondary axis [1120] direction, and can determine the direction of the polar axis. With regard to the distribution of the corrosion pits, it can be judged that the crystal grown under the current conditions has a high quality.