如300～1200eV低能氩离子束以45°入射角溅射锗、硅、玻璃等七种样品的抛光表面,则样品表面都出现均匀分布的小丘。考察了离子入射角、能量、剂量、靶子旋转与否对貌相的影响。二次离子质谱和俄歇电子能谱的分析都表明了小丘不是由于杂质再沉积而形成。我们提出了关于小丘形成机理的假设,推导出小丘形成与离子入射角、能量、剂量等的关系式,并对实验结果作出了满意的解释。 Such as 300 ~ 1200eV low-energy argon ion beam sputtering angle of 45 ° incident surface of germanium, silicon, glass and other samples of the polished surface, the sample surface uniform distribution of hillocks. The effect of ion incident angle, energy, dose and rotation of the target on the topography was investigated. Secondary ion mass spectrometry and Auger electron spectroscopy analysis showed that the hillock is not due to the re-deposition of impurities formed. We put forward hypothesis about the formation mechanism of hillocks, derive the relation between hillock formation and ion incident angle, energy, dose and so on, and give a satisfactory explanation for the experimental results.