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由求解垂直npn晶体管基区电阻的物理模型获得的微分方程得到横向基极电流和基—射结电压的表达式。理论和实验结果都证明一方面在收集极电流很大时单个收集极向上电流增益的减少是由于横向电压降所致,且高注入效应仅在电流增益小到无关紧要的情况下出现,另一方面电流增益相对于收集极电流的曲线表明横向电压降出现带有极值的拐点。距离注入极最近的收集极这种效应显著(甚至在几个同样的收集极情况下也是如此)。而且看出电流增益的减少和本征晶体管的电流增益几乎无关。
From the differential equations obtained by solving the physical model of the vertical npn transistor base resistance, expressions of the transverse base current and the base-emitter junction voltage are obtained. Both theoretical and experimental results show that on the one hand, the reduction of the current gain of a single collector in the case of a large collector current is due to the lateral voltage drop, and the high injection effect only occurs when the current gain is small enough to be negligible. Aspects of the current gain versus collector current curve show that the lateral voltage drop has an inflection point with an extreme value. This effect is significant (even for several identical collectors) from the closest collector. Moreover, it can be seen that the decrease of the current gain is almost irrelevant to the current gain of the intrinsic transistor.