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以超白玻璃为衬底,利用热丝化学气相沉积和磁控溅射法制备了Glass/nc-Si/Al叠层结构,置入管式退火炉中进行等离子体辅助退火。样品在氢等离子体氛围下进行了400,425和450℃不同温度,5 h的诱导退火,用光学显微镜和拉曼光谱对样品进行了性能表征。结果表明随着诱导温度升高,样品的Si(111)择优取向越来越显著;晶粒尺寸不断增大,在450℃诱导温度下获得了最大晶粒尺寸约500μm的连续性多晶硅薄膜,且该温度下薄膜晶化率达97%;薄膜的结晶质量也随着温度的升高而不断提高。样品经450℃诱导后的载流子浓度p为5.8×1017cm-3,薄膜霍尔迁移率μH为74 cm2/Vs。还从氢等离子体钝化的角度分析了等离子体环境下铝诱导纳米硅的机理。
The glass / nc-Si / Al laminated structure was prepared by hot wire chemical vapor deposition and magnetron sputtering with ultra-white glass as the substrate. Plasma annealing was performed in a tube annealing furnace. The samples were annealed at different temperatures of 400, 425 and 450 ℃ for 5 h in a hydrogen plasma atmosphere. The samples were characterized by optical microscopy and Raman spectroscopy. The results show that the preferred orientation of Si (111) is more and more obvious with the increase of the induction temperature. The grain size increases continuously and the continuous polycrystalline silicon film with the maximum grain size of about 500μm is obtained at the induction temperature of 450 ℃ The crystallization rate of the film is 97% at this temperature. The crystallization quality of the film also increases with the increase of the temperature. After the sample was induced at 450 ℃, the carrier concentration p was 5.8 × 10 17 cm-3, and the film Hall mobility μH was 74 cm2 / Vs. The mechanism of aluminum-induced nanosilica in plasma environment was also analyzed from the viewpoint of hydrogen plasma passivation.