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通过采用斜凹槽结构改进了砷化镓功率 MESFET 的性能。在6千兆赫波段,增益4分贝下,得到最大输出功率为15瓦,在11千兆赫波段,3分贝增益下为4.3瓦。由于采用了高掺杂(n~+)漏区或陡凹槽结构,已制成具有高源-漏击穿电压的砷化镓功率 MESFET。然而,研究这些器件的光发射发现,在载流子集中或有源层的厚度突然变化的区域存在着高场强区。为了解决这个问题,研究出一种称之为斜凹槽器件的新结构(图1)。外延层的厚度从栅有源区到源和漏电极“逐渐地”增加,从而避免了不规则电场的集中,同时也减
The performance of gallium arsenide power MESFETs is improved by using a beveled recess structure. In the 6 GHz band, with a gain of 4 dB, the maximum output power is 15 watts and is 4.3 watts at 11 GHz with a 3 dB gain. Gallium arsenide power MESFETs with high source-drain breakdown voltage have been fabricated due to the highly doped (n ~ +) drain or steep recess structure. However, studying the light emission of these devices found that there is a high field strength region in the area where the concentration of carriers or the thickness of the active layer suddenly changes. In order to solve this problem, a new structure called oblique grooved device was developed (Fig. 1). The thickness of the epitaxial layer increases “gradually” from the gate active region to the source and drain electrodes, avoiding the concentration of irregular electric fields and reducing