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利用半导体 PN结器件一维模拟程序 m PND1 D,计算了二极管在不同电磁脉冲电压源条件下的失效和烧毁时器件吸收的能量 ,并对结果作了初步分析。
The semiconductor PN junction device one-dimensional simulation program m PND1 D was used to calculate the diode energy failure under different electromagnetic pulse voltage source and the energy absorbed when the device was burnt down. The results were analyzed preliminarily.