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本文报道了用低压ＭＯＶＰＥ和ＲＦ－分子束外延法在蓝宝石衬底上作极性控制的ＧａＮ生长。以“双Ａｌ单层”模型讨论了用ＭＯＶＰＥ和ＭＢＥ法在蓝宝石衬底上生长ＧａＮ的极性选择的机理，并对ＡｌＮ在极性转换过程中的作用给出了适当的解释。通过极性控制的生长，使ＭＢＥ法生长的ＧａＮ的表面形貌和电学特性都得到了改善；并对ＬＰ－ＭＯＶＰＥ生长开发出了一种“三步生长法”，这样就可以用更多的外延方式在蓝宝石衬底上生长出高质量的ＧａＮ膜。
This paper reports the polarity-controlled GaN growth on low-voltage MOVPE and RF-molecular beam epitaxy on a sapphire substrate. The mechanism of polarity selection of GaN grown on sapphire substrate by MOVPE and MBE methods is discussed in the context of “double Al monolayer” model, and the proper explanation of the role of AlN in polarity inversion process is given. By polar-controlled growth, the surface morphology and electrical properties of GaN grown by the MBE method are improved; and a “three-step growth method” is developed for LP-MOVPE growth so that more Epitaxial growth on the sapphire substrate to grow high-quality GaN film.