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采用电子束蒸发法制备了单层TiO2薄膜,控制O2流量从10mL/min以步长10mL/min递增至50mL/min(标况下)。利用ZYGO干涉仪测量基片镀膜前后的面型变化;采用Stoney公式计算出残余应力,分析了不同O2压下残余应力的变化。在本实验条件下,TiO2薄膜的应力随O2的增大,张应力先增大后减小;随O2压继续增大,由张应力逐渐过渡到压应力;O2压过大时,压应力减小。因此,可以通过改变O2压来控制薄膜的应力。应力的变化与薄膜的微观结构密切相关,分析了所有样品的X射线衍射(XRD)谱发现,薄膜结构均为非晶态。
Single layer TiO2 thin films were prepared by electron beam evaporation, and the O2 flow rate was controlled from 10mL / min to 10mL / min in increments of 50mL / min (under standard conditions). The ZYGO interferometer was used to measure the surface change before and after the substrate coating. The Stoney formula was used to calculate the residual stress. The residual stress changes under different O2 pressures were analyzed. Under the experimental conditions, the stress of TiO2 film increases with the increase of O2, and the tensile stress first increases and then decreases. With the increase of O2 pressure, the stress gradually shifts from tensile stress to compressive stress. When O2 pressure is too high, the compressive stress decreases small. Therefore, by changing the O2 pressure to control the film stress. The change of stress is closely related to the microstructure of the film. The X-ray diffraction (XRD) spectra of all the samples were analyzed. The results showed that all the films were amorphous.