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对氢氧合成和干氧栅氧化后注Ｆ的Ｐ沟ＭＯＳＦＥＴ和Ｎ沟ＭＯＳＦＥＴ进行了γ射线辐照试验，比较了两种栅介质注Ｆ的电离辐射响应特性。研究表明，氢氧合成栅氧化后注Ｆ的ＭＯＳＦＥＴ具有较强的抑制辐射感生氧化物电荷和界面态生长的能力。用一个新的模型对实验结果进行了讨论，该新模型中用Ｓｉ—Ｆ结键替代其它在辐射场中易成为电荷陷阱的应力键，并考虑到不同氧化方式导致栅介质本身具有的电子陷阱数、空穴迁移率和氧化时所引入缺陷量的差异。
Γ-ray irradiation experiments were carried out on P-channel MOSFETs and N-channel MOSFETs after hydrogen oxidation and dry-oxide gate oxide injection. The ionization radiation responses of the two gate dielectrics were compared. Studies have shown that MOSFETs with a gate-oxide after hydrogen-oxygen recombination have a strong ability to suppress radiation-induced oxide charge and interface-state growth. The experimental results are discussed with a new model in which Si-F junctions are substituted for other stress-prone bonds that become charge traps in the radiation field, taking into account the electron traps inherent in the gate dielectric due to different oxidation modes Number, hole mobility and the amount of defects introduced when oxidized.