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用一种新的隧道注入机构,研究了半导体表面耗尽层准二维系统的电子能谱.对Si(100)表面,在室温下,确定出了多达10个以上的子带能量.给出了测量的理论分析和实验方法.实测结果表明,理论与实验符合得相当好.
A new tunneling mechanism was used to study the electron spectra of the quasi-two-dimensional system of the depletion layer on the semiconductor surface. As many as ten or more subband energies were determined for Si (100) surface at room temperature. Out of the theoretical analysis and experimental methods of measurement.The experimental results show that the theory and experiment are in good agreement.