建立了PDP驱动芯片用高压LDMOS的SPICE子电路模型,该模型集成了LDMOS固有特性:准饱和特性、电压控漂移区电阻、自热效应、密勒电容等.与其他物理模型和子电路模型比较,该模型不但能提供准确的模拟结果,而且建模简单快捷,另外该模型可较容易地嵌入SPICE模拟软件中.模型的实际应用结果显示:模拟与实测结果误差在5%以内. A SPICE sub-circuit model for high-voltage LDMOS for PDP driver chips is established, which incorporates the inherent characteristics of LDMOS: quasi-saturation characteristics, voltage controlled drift region resistance, self-heating effect, Miller capacitance, etc. Compared with other physical models and sub-circuit models, The model not only provides accurate simulation results, but also has a simple and quick modeling method. In addition, the model can be easily embedded in the SPICE simulation software. The practical application of the model shows that the error between simulation and measured results is within 5%.