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在无氧气氛下，采用射频磁控溅射法制备了ＰＬｚＴ系列薄膜，对原位溅射薄膜进行了快速退火及常规退火处理，深入研究了退火工艺对铁电薄膜结构与性能的影响。认为采用常规退火工艺处理无氧溅射的薄膜时，铁电薄膜具有更好的晶体结构和铁电性能。
In an oxygen-free atmosphere, PLzT thin films were prepared by RF magnetron sputtering. The in-situ sputtering films were annealed and annealed regularly. The effects of annealing process on the structure and properties of the ferroelectric thin films were investigated. It is considered that the ferroelectric thin film has better crystal structure and ferroelectric properties when the conventional annealing process is used to treat an oxygen-free sputtered film.