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据《科学时报》2005年6月9日报道。中科院半导体所的科技人员重点研究和解决了大直径半绝缘砷化镓(SI-GaAs)单晶从研究到生产的重复稳定性、可靠性及成品率等各项实用化关键工艺技术问题,在大直径半绝缘砷化镓单晶生长工艺技术和晶片加工工艺技术研发取得了突破性进展,使晶体质量、加工技术都达到国际先进水平。
According to “Science Times” reported on June 9, 2005. The scientists and technologists at the Institute of Semiconductors (CAS) focus on the practical application of key technology issues such as repeated stability, reliability and yield of large-diameter semi-insulating GaAs single crystals from research to production. Large-diameter semi-insulating gallium arsenide single crystal growth technology and wafer processing technology research and development has made a breakthrough, the crystal quality, processing technology has reached the international advanced level.