对于主存储器的双极存储单元,如果要芯片具有高的集成度,必须满足这样一些要求,如,低的功耗、简单的结构和低的功耗-延迟乘积。本文讨论一种新的静态双极存储器。这种存储器的操作原理,与存储器单元的信息传递一样是基于中介绍的载流予注入的原理。单元的简单结构及其外围电路可以直接应用这个原理来得到。 For the main memory bipolar memory cell, if the chip is to be highly integrated, such requirements must be met, such as low power consumption, simple structure, and low power-delay products. This article discusses a new static bipolar memory. The principle of operation of this memory, as with the memory cell information transfer, is based on the principle of current-carrying injections described in the introduction. The simple structure of the unit and its peripheral circuits can be directly applied to this principle.