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利用脉冲辉光放电的方法,在硅片上采用不同的沉积工艺制备了含氢类金刚石膜层,并采用Raman光谱和X射线光电子能谱(XPS)对膜层进行表征.用Raman光谱仪在波长为325nm的紫外光源的激励下观察膜层的键结构.紫外Raman光谱对含氢类金刚石膜是非常有用的,它能有效避免可见光Raman光谱测量时的荧光干扰,清晰地得到膜层的D峰和G峰.同时利用XPS分析得到膜层的sp3键含量,并与Raman光谱所得数据进行比较.通过Raman光谱和XPS分析可以发现,在紫外光源的激励下,膜层的G峰峰位向高频移方向移动,G峰峰位、I(D)/I(G),G峰半高宽和sp3键含量之间存在一定的关系.
The hydrogen-containing diamond-like carbon (DLC) films were deposited on silicon wafers by pulse glow discharge, and the films were characterized by Raman spectroscopy and X-ray photoelectron spectroscopy (XPS) The structure of the film was observed under excitation of 325nm UV light source.The ultraviolet Raman spectroscopy is very useful for hydrogen-containing diamond-like carbon films, which can effectively avoid the fluorescence interference when measuring the Raman spectrum of visible light and clearly obtain the D-peak And G peak.At the same time, the sp3 bond content of the film was obtained by XPS analysis and compared with the data obtained by Raman spectroscopy.By Raman spectroscopy and XPS analysis, it can be found that under the excitation of UV light source, the peak position of G peak of the film is high There is a certain relationship between the shift of the shift direction, the peak position of G peak, I (D) / I (G), the full width at half maximum of G peak and the sp3 bond content.