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深能级瞬态谱(DLTS)是一种研究半导体深能级、界面态、非晶态、检测分析微量深能级杂质和缺陷的重要技术.本文利用DLIS技术,对器件的失效机理作分析探讨得到以下两点体会:(1)用DLTS技术,不必将失效器件启封,就可以区别是属于体内失效还是表面失效,为进一步开展失效机理分析提供了重要的信息;(2)对于由深能级杂质影响电参数的器件,采用DLTS技术,可以有效地进行失效机理分析.
Deep Level Transient Spectroscopy (DLTS) is an important technique to study the deep level, interface state and amorphous state of semiconductor, and to detect and analyze the trace level impurities and defects in the semiconductor.In this paper, the DLIS technique is used to analyze the failure mechanism of the device Explore the following two experiences: (1) DLTS technology, without the failure of the device unsealed, you can distinguish between the body failure or surface failure, to further carry out failure mechanism analysis provides important information; (2) for the deep Level impurity affecting the electrical parameters of the device, the use of DLTS technology can effectively failure mechanism analysis.