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采用高温固相法合成了不同Si 4+掺杂比例的Gd1.6(W1-x Six)O6:Eu3+0.4荧光粉,分析了Si 4+掺杂对Gd1.6(W1-x Six)O6:Eu3+0.4荧光粉晶格结构的影响,研究了不同Si 4+掺杂比例下的XRD谱、激发光谱、发射光谱和衰减曲线。结果发现:Si 4+的掺杂改变了基质的结构,使得激活剂离子Eu3+周围的晶体场改变,从而改变了荧光粉的发光效率,当Si 4+的掺杂浓度达到0.4mol时,晶体对称性最差,粉体发光强度最大。根据发射光谱和衰减曲线计算了样品的J-O强度参数和无辐射跃迁几率,结果表明适量的Si 4+掺杂可以抑制无辐射跃迁,提高发光强度。计算结果与实验结果相符。
Gd1.6 (W1-x Six) O6: Eu3 + 0.4 phosphors with different Si 4+ doping ratios were synthesized by high temperature solid-state reaction. The effects of Si 4+ doping on the photocatalytic activity of Gd1.6 (W1-x Six) O6 : Eu3 + 0.4 phosphor lattice structure, XRD spectra, excitation spectra, emission spectra and decay curves of different Si 4+ doping ratio were studied. The results show that the doping of Si 4+ changes the structure of the matrix and changes the crystal field around the activator ions Eu3 +, thus changing the luminescent efficiency of the phosphor. When the doping concentration of Si 4+ reaches 0.4mol, the crystal symmetry The worst, the largest luminous powder. The J-O intensity parameters and the non-radiative transition probabilities of the samples were calculated according to the emission spectra and the decay curves. The results show that the appropriate amount of Si 4+ doping can inhibit the non-radiative transition and increase the luminescence intensity. The calculation results are consistent with the experimental results.