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【本刊讯】近日,安森美半导体宣布推出采用提升CCD图像传感器的近红外灵敏度的技术,增强存严格要求的工业应用中的成像性能。据悉,800万像素(MP)KAI-08052图像传感器是安森美半导体CCD产品阵容中首款采用该新技术的器件,提供的近红外(NIR)波长灵敏度达公司标准的Interline TransferCCD像素设计的两倍。此增强的灵敏度对以下应用非常关键如科学和医疗成像等应用中在NIR波长中取样发光或发出荧光;或在机器视觉和智能交通系统(ITS)中,NIR照明
Recently, ON Semiconductor announced the introduction of technology to enhance the near-infrared sensitivity of CCD image sensors and enhance the imaging performance in demanding industrial applications. It is learned that the 800-megapixel (MP) KAI-08052 image sensor is the first device in the ON Semiconductor CCD family that uses this new technology to deliver near-infrared (NIR) wavelength sensitivity twice as fast as the company-standard Interline TransferCCD pixel design . This increased sensitivity is critical for applications such as sampling in science and medical imaging to luminescence or fluorescence at NIR wavelengths or in machine vision and ITS (Intelligent Transportation Systems), NIR lighting