抛光片表面的平整度和完整性是硅单晶片的重要参数之一.晶片制备过程中残留在表面的划痕、浅坑等机械损伤,不仅可直接造成Pn结不平坦,而且还是硅器件工艺中二次缺陷的成核中心.抛光的目的便是要为器件制造提供尽可能完美的、无机械损伤和杂质沾污的镜面表面.硅片表面损伤的检测已经发展了多种的分析方法.但是由于这些检测方法大多设备昂贵、操作复杂、周期长.目前国内仅用于科研中.工厂中对抛光片表面质量的检 The flatness and integrity of the surface of the polishing pad is one of the important parameters of the silicon single wafer.The scratches and shallow pits and other mechanical damages remaining on the wafer during the fabrication process can not only directly cause the Pn junction to be uneven but also be a silicon device process Secondary defects in the nucleation center. The purpose of polishing is to provide the best possible device manufacturing for the mirror surface without mechanical damage and impurity contamination. Detection of silicon surface damage has developed a variety of analytical methods. However, because most of these detection methods are expensive, complicated and long-term, they are only used in scientific research at present.