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基于微电子机械系统的可调谐滤波器和垂直腔表面发射激光器具有宽的连续调谐范围、无偏振灵敏工作和二维陈列集成的独特性能,因而已引起极大关注。但它的一大缺点是需要几十伏的调谐电压,此外由于微机械悬臂是通过静电力向下移动,其实际移动距离仅为实际宽度1/3,所以这种采用静电力的 MEMS 基滤波器的最大调谐范围受到限制。日本东京技术研究所的微系统研究中心首次研制成功一种具有低调谐电压的新型GaAlAs/GaAs 微机械热调谐垂直腔滤波器,由于热应变控制层与加热元件的集成,具有创记录的低至4.7 V 的调谐电压,并可获得23.2 nm 的波长调谐。该器件是在上下两层 GaAlAs/OaAs DRB 之间形成一个空气隙,在上 GaAlAs/GaAs DRB 上有 GaAs 或 GaAlAs 热应变控制层,当施加电压时热应变导致微机械悬臂的移动。当热应变控制层为热膨胀系数较小的 GaAlAs 时,悬臂向上移动。反之,为热膨胀
Tunable filters based on microelectromechanical systems and vertical cavity surface emitting lasers have attracted a great deal of attention due to their wide continuous tuning range, unique performance without polarization sensitivity and two-dimensional array integration. However, one of its major drawbacks is that it requires tens of volts of tuning voltage. In addition, since the micro-mechanical cantilever is moved downward by electrostatic force and its actual moving distance is only 1/3 of the actual width, the MEMS-based filtering using electrostatic force The maximum tuning range of the device is limited. A novel GaAlAs / GaAs micromechanical thermo-tuned vertical-cavity filter with low tuning voltage was developed for the first time at the Microsystems Research Center at the Tokyo Institute of Technology in Japan. Due to the integration of the thermal strain control layer and the heating element, it has a record low 4.7 V tuning voltage, and get 23.2 nm wavelength tuning. The device forms an air gap between the upper and lower layers of GaAlAs / OAsAsDRB, and has a GaAs or GaAlAs thermal strain control layer on the upper GaAlAs / GaAsDRBs. Thermal strain causes the movement of the micromechanical cantilever when voltage is applied. When the thermal strain control layer is GaAlAs with a small coefficient of thermal expansion, the cantilever moves upward. On the contrary, for thermal expansion