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由于综合性能优势,GaN基功率器件更适合于卫星电子系统等空间设备中射频功率放大模块的发展需求。因此,GaN基器件及材料的辐照效应研究显得尤为重要。通过对GaN基材料和器件进行质子辐照研究,可以发现,低注量辐照增加了GaN材料的载流子浓度和迁移率,降低了材料的串联电阻。此外,辐照增加了GaN的张应力,引起了材料表面形貌恶化,而对位错密度影响甚小。对于GaN基高电子迁移率晶体管(HEMT)器件,辐照发生在较高注量下,器件参数才发生较为明显的退化,而且阈值电压变化最为显著,分析认为,高注量辐照时,辐照感生受主缺陷造成的二维电子气(2DEG)浓度降低是上述器件退化的主要原因。
Due to its comprehensive performance advantages, GaN-based power devices are more suitable for the development of RF power amplifier modules in space devices such as satellite electronic systems. Therefore, the GaN-based devices and materials, radiation effects study is particularly important. Through the study of proton irradiation on GaN-based materials and devices, it can be found that low-dose irradiation increases the carrier concentration and mobility of the GaN material and reduces the series resistance of the material. In addition, irradiation increases the tensile stress of GaN, causing the surface morphology of the material to deteriorate, with little effect on the dislocation density. For GaN-based high electron mobility transistor (HEMT) devices, irradiation occurs at a higher fluence, and the device parameters degrade more obviously, and the threshold voltage changes most significantly. The analysis shows that when the high fluence is irradiated, the radiation Degradation of 2-dimensional electron gas (2DEG) due to the defect of the acceptor is the main reason for the above device degradation.