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本文通过大量试验,分析出了硅外延产生滑移线的主要因素;并对消除滑移线的工艺和热处理条件选择地进行了试验总结,取得了可实用的工艺方法.
In this paper, a large number of experiments were conducted to analyze the main factors that lead to slippage of silicon epitaxy. The process of removing slipping lines and heat treatment conditions were selected and tested. Practical methods were obtained.