论文部分内容阅读
在某些衬底上生长薄外延层时发现有局部未长外延层的区域——“外延空白区”,它会影响外延层的均匀性.由于这类空白区中心附近总有凹的破损区域或有异样结构,这必然会产生应力,可推断“外延空白区”与晶格缺陷产生的应力有关.用故意在衬底表面的局部区域产生划痕,或进行离子注入,或产生离解等办法造成晶格缺陷,产生应力,同样得到了“外延空白区”,证明了我们推断的正确.由此提示我们为得到高质量的薄外延层需要注意选择无局部应力集中区域的衬底。
The growth of thin epitaxial layers on some substrates was found to be partially epitaxial blanket areas - the “epitaxial blank area”, which affects the uniformity of the epitaxial layer.Because there is always a concave damage area near the center of these blank areas Or a strange structure, which inevitably generates stress, it can be inferred that the “epitaxial blank area” is related to the stress generated by the lattice defect, which is caused by intentional scratches on the surface of the substrate, ion implantation or dissociation Resulting in lattice defects, resulting in stress, also obtained “epitaxial blank area”, to prove that we infer the correct, thus suggesting that we get high quality thin epitaxial layer need to pay attention to choose no local stress concentration area of the substrate.