论文部分内容阅读
在90～300K温区范围内测试了中子辐照直拉硅单晶的正电子寿命谱及红外光谱,发现直拉硅单晶的中子辐照缺陷主要是双空位和氧-空位复合体.此外,还分析了这些缺陷的一些基本性质.
In the range of 90 ~ 300K, the positron lifetime and infrared spectra of the neutron-irradiated Czochralski silicon single crystal were tested. It was found that the defects of the neutron irradiation of the Czochralski silicon single crystal mainly were the double vacancy and the oxygen-vacancy complex In addition, some basic properties of these defects are also analyzed.