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GaN晶体管与其竞争对手GaAs晶体管比较,其性能大有改进。GaNHEMT特别适用于F类放大器,因为其fmax比基本工作频率高。这有助于产生波成形所必须的更高次谐波。加里福尼亚大学的研究人员采用GaN HEMT和混合印刷电路板封装成功设计、制造出F类放大器并对它进行了测试。该放大器2GH
GaN transistors have greatly improved their performance compared with their competitors GaAs transistors. GaNHEMT is particularly suitable for Class F amplifiers because of its fmax higher than the basic operating frequency. This helps to produce the higher harmonics necessary for wave shaping. Researchers at the University of California successfully designed and fabricated a Class F amplifier in a GaN HEMT and hybrid printed circuit board package and tested it. This amplifier 2GH