一、引言近几年来曾提出并制成了一些新的双极型集成电路结构,这些结构表现出高的封装密度、简单的制造过程,以及合理的功率-延迟时间乘积。本文所介绍的新型双极结构,在制造整个集成电路过程中将第一层金属化包括在内也仅用到三次光刻掩蔽工序。 I. INTRODUCTION In recent years, some new bipolar integrated circuit structures have been proposed and made. These structures exhibit high packing density, simple manufacturing process, and reasonable power-delay time product. The new bipolar structure presented in this article also uses only three photolithographic masking steps to include the first metallization in the fabrication of the entire IC.