在 １０５０ ℃下用 Ｓｉ２Ｈ６和 Ｃ２Ｈ４在 Ｓｉ（１００）衬底上外延生长了 ３Ｃ－ＳｉＣ，生长前只通入Ｃ２Ｈ４将 Ｓｉ衬底碳化形成 ＳｉＣ缓冲层碳化过程中 Ｃ２Ｈ４与 Ｓｉ表面反应形成了 ＳｉＣ孪晶，但随着生长时间的延长，外延层转变为单晶层，其表面呈现典型的单晶 ＳｉＣ的（２×１）再构从外延层的 Ｒａｍａｎ谱观察到明显的ＳｉＣ的ＴＯ和ＬＯ声子模；ＳＥＭ观测结果表明，外延层的表面比较平整 3C-SiC was epitaxially grown on Si (100) substrate by using Si2H6 and C2H4 at 1050 ℃. Only C2H4 was introduced into the substrate before carbonization to form SiC buffer layer. During the carbonization, C2H4 reacts with Si surface to form SiC twin However, as the growth time prolongs, the epitaxial layer is transformed into a single crystal layer, and the surface of the epitaxial layer changes to a (2 × 1) typical single crystal SiC. From the Raman spectrum of the epitaxial layer, obvious TO and LO sound The results of SEM observation show that the surface of epitaxial layer is relatively flat