一、引言 众所周知,制造半导体器件的平面工艺要求精密地控制氧化层厚度、扩散浓度及深度、外延层厚度以及这些参数在工艺过程中的纵向、横向均匀性。实验发现,气体的流量、流速、温度对这些参数有比较明显的影响,特别是温度的影响更为显著。随着半导体工艺技术的迅速发展,大规模集成电路的大量投产,硅片的尺寸也愈来愈大。这样,为了提高元、器件的成品率和优品率,在氧化、扩散、外延等工艺中,必须要求精密控制温度、气流速度等工艺条 I. INTRODUCTION It is well known that the planar process of manufacturing semiconductor devices requires precise control of oxide thickness, diffusion concentration and depth, epitaxial layer thickness and the longitudinal and transverse uniformity of these parameters in the process. The experiment found that the gas flow rate, flow rate and temperature have obvious influence on these parameters, especially the influence of temperature is more significant. With the rapid development of semiconductor technology, mass production of large-scale integrated circuits, the size of silicon is also growing. In this way, in order to improve the element and device yield and excellent product rate, oxidation, diffusion, epitaxy and other processes, you must require precise control of temperature, air flow rate and other technology