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微波晶体管可分为双极晶体管和场效应晶体管两大类。在微波频率范围内,这些器件主要应用于微波低噪声放大器和微波功率源。双极晶体管已有较长的发展历史,现已进入成熟阶段,但到目前为止,一般限于C波段以下应用,而场效应晶体管在C—Ku波段仍表现出良好的微波性能。从应用来说,一般使用双极晶体管电路较为简单。在放大器中容易作到宽带匹配,而使用场效应管则较为复杂。因此,在近期内,在C波段以下的应用中,双极晶体管仍占主导地位。在C波段以上,双极晶体管的性能还有待进一步改进。而场效应管在C~Ku波段将占主要地位。
Microwave transistors can be divided into bipolar transistors and field-effect transistors in two broad categories. In the microwave frequency range, these devices are mainly used in microwave low noise amplifiers and microwave power sources. Bipolar transistors have a long history of development and are now in their mature stages, but until now they have generally been limited to C-band applications, while field-effect transistors have shown good microwave performance in the C-Ku band. From the application, the general use of bipolar transistor circuit is relatively simple. Broadband matching is easy in amplifiers, and the use of FETs is more complicated. As a result, bipolar transistors are still dominant in the near-C-band applications in the near term. Above C-band, the performance of bipolar transistors needs to be further improved. The FET in the C ~ Ku band will dominate.