日本电气公司最近使用一种引人注目的超高速、超高频半导体元件材料—InP化合物半导体,试制成功了超高频MISFET(金属—绝缘物—半导体,场效应晶体管)。同时确定了它可以在X波段以上的高频区域进行工作,从而作为高效率、高输出元件是大有希望的。近年来,GaAs以柱型硅的形式正极力研究发展超高速集成电路,而InP与GaAs相比,其优点是具有电子饱和速度快、热传导率大、离子化系数小等优良物性,而且容易制成在耐 NEC recently made a successful trial of ultra-high-frequency MISFETs (metal-insulator-semiconductors, field-effect transistors) using a high-speed, ultra-high-frequency semiconductor material called InP compound semiconductor. At the same time, it is determined that it can work in the high-frequency region above the X band, so that it is promising as a high efficiency and high output element. In recent years, GaAs in the form of columnar silicon positive research and development of ultra-high speed integrated circuits, and InP compared with GaAs has the advantages of electronic saturation velocity, thermal conductivity, ionization coefficient is small and good properties, and easy Into resistance