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硅表面固有的菲涅耳反射,使得硅基半导体光电器件(如太阳能电池、红外探测器)表面有30%以上的入射光因反射而损失掉,严重影响着器件的光电转换效率.寻找一种方法降低硅基表面的反射率,进而提高器件的效率成为近年来研究的重点.本文基于纳米压印光刻技术,在2英寸单晶硅表面制备出周期530nm,高240nm的二维六角截顶抛面纳米柱阵列结构.反射率的测试表明,当入射光角度为8°时,有纳米结构的硅片相对于无纳米结构的硅片来讲,在400到2500nm波长范围内的反射率有很明显的降低,其中,800到2000nm波段的反射率都小于10%,在波长1360nm附近的反射率由31%降低为零.结合等效介质理论和严格耦合波理论对结果进行了分析和验证.
The inherent Fresnel reflection on the silicon surface causes more than 30% of the incident light on the surface of the silicon-based semiconductor optoelectronic devices (such as solar cells and infrared detectors) to be lost due to reflections, seriously affecting the photoelectric conversion efficiency of the device. Method to reduce the reflectivity of the silicon surface and further improve the efficiency of the device become the focus of research in recent years.In this paper, based on nanoimprint lithography, a two-dimensional hexagonal truncated period of 530nm and 240nm The results of the reflectivity tests show that the reflectivity of the nanostructured silicon wafers is in the range of 400 to 2500 nm compared with that of the non-nanostructured silicon wafers when the incident light angle is 8 ° , And the reflectivity in the wavelength range of 800 to 2000 nm is less than 10%, and the reflectivity decreases from 31% to 0 in the vicinity of the wavelength of 1360 nm.The results are analyzed and verified by using the equivalent medium theory and the strict coupling wave theory .