论文部分内容阅读
碳纳米管因具有良好的物理机械性能而得到广泛的研究,其最重要的应用之一是构建场效应晶体管(FET)。文章提出并研究了一种非对称接触的单壁碳纳米管场效应晶体管(SWNT-FET),并对其电学特性进行了表征。在该器件中,SWNT被作为FET的沟道,两种不同功函数的金属被用来与SWNT形成肖特基接触;SWNT一端与低功函数金属Al形成源极,另一端与高功函数金属Pd形成漏极。该类器件可应用于下一代纳米集成电路中。
Carbon nanotubes have been extensively studied for their good physical and mechanical properties. One of the most important applications of them is the construction of field effect transistors (FETs). In this paper, an asymmetric contact single-walled carbon nanotube field effect transistor (SWNT-FET) is proposed and studied, and its electrical characteristics are characterized. In this device, SWNT is used as the channel of the FET. Two different work function metals are used to form Schottky contact with the SWNT. One end of the SWNT forms a source with a low work function metal Al and the other end is connected with a high work function metal Pd forms a drain. Such devices can be applied to the next generation of nano-integrated circuits.