在5cm波段GaAs FET研究的基础上,采用氧离子注入代替化学腐蚀台面作隔离,用普通接触式光刻曝光一金属剥离技术制作0.8～1.μ的栅条,并采用深挖槽等方法,我们已试制出3cm的GaAs FET。这种用生陶瓷管壳封装的器件,在10GHz下,噪声系数N_F=4.7dB、增益G_(N_F)=4.7dB,或者N_F=5.8dB、G_(N_F)=7dB。其管芯照片示于下图。 Based on the research of GaAs FET in 5cm band, oxygen ion implantation was used instead of chemical etching to make the isolation of the mesa with a 0.8 ~ 1.μ grid by common contact lithography exposure and deep grooving. We have prototyped a 3cm GaAs FET. The devices packaged with green ceramic tubes have a noise figure of N_F = 4.7dB, a gain of G_ (N_F) = 4.7dB, or N_F = 5.8dB and G_ (N_F) = 7dB at 10GHz. The die photo is shown below.