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本文报导了将稀土元素钇(Y)掺入非晶硅中,获得了一种新的 a-Si∶H(Y)材料的实验结果。实验证明掺钇的 a-Si∶H 材料较 a-Si∶H 合金电阻率显著下降,当掺钇浓度达8%时,材料的室温电阻率可下降到～2Ω·cm。热探针测试表明该材料为 n 型。变温电导测量指出在室温附近是激活型延展态电子导电。光吸收测量给出在可见光范围 a-Si∶H(Y)较 a-Si∶H 吸收系数普遍增大,当掺钇浓度达5%时,光学带隙约为1.38eV。红外吸收测量发现,a-Si∶H(Y)材料存在一个宽的1500～2100cm~(-1)范围的吸收带,并且在波数大于2600cm~(-1)时,随波数的增加吸收逐渐增强。
In this paper, the experimental results of a new a-Si: H (Y) material were obtained by incorporating rare earth element Y into amorphous silicon. The experimental results show that the resistivity of a-Si: H doped with yttrium is significantly lower than that of a-Si: H. When the concentration of yttrium is up to 8%, the room-temperature resistivity of the a-Si: H decreases to ~ 2Ω · cm. Thermal probe testing showed the material was n-type. Variable temperature conductivity measurements indicate that near-ambient activation is an extended-state electronic conduction. The optical absorption measurements give a general increase of a-Si: H (Y) over the a-Si: H absorption coefficient in the visible range and an optical band gap of about 1.38 eV when the concentration of yttrium is 5%. Infrared absorption measurements showed that there is a wide absorption band in the range of 1500 ~ 2100cm -1 for a-Si:H (Y) material and the absorption increases with increasing wave number when the wave number is more than 2600cm -1 .