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用实验的方法研究了GaAs功率MESFET性能与器件参数的关系。功率增益、输出功率随栅长的变化很灵敏,随着栅长的增加,功率增益的率是1.7dB/μm,输出功率的降低率是0.67dB/μm。栅指的宽度对微波性能的影响不明显,在8GHz下栅指宽度一直增大到200μm,其性能尚未开始变坏。对于GaAs功率MESFET微波性能与温度的关系以及热阻与器件几何参数的关系也进行了定量研究。随着器件温度的升高,功率增益的降低率是0.026dB/°C。
The relationship between the performance of GaAs power MESFETs and the device parameters has been investigated experimentally. The power gain and output power are sensitive to the change of the gate length. With the increase of the gate length, the power gain rate is 1.7 dB / μm and the output power reduction rate is 0.67 dB / μm. The width of the gate finger has no obvious effect on the microwave performance. At 8 GHz, the gate finger width has been increased to 200 μm, and its performance has not started to deteriorate. The relationship between the microwave performance and the temperature of the GaAs power MESFET and the relationship between the thermal resistance and the geometrical parameters of the device are also studied quantitatively. As the device temperature increases, the power gain reduction rate is 0.026dB / ° C.