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针对传统建模方法较复杂的问题,提出一种碳化硅(SiC)金属氧化物半导体场效应晶体管(MOSFET)行为建模的方法。用一组简单方程描述了SiC MOSFET的静态特性并考虑了其温度特性,对两个主要的寄生电容采用了非线性拟合的方法。叙述了模型的构成和实现,与传统方法相比,建模过程中所有参数均基于数据手册,无需进行额外的实验和测试,极大地降低了建模难度。双脉冲测试结果表明模型具有很高的精度。
Aiming at the problem of the more complicated traditional modeling methods, a method for modeling the behavior of silicon carbide (SiC) field effect transistors (MOSFETs) is proposed. A simple set of equations is used to characterize the static behavior of SiC MOSFETs and to take into account their temperature characteristics. A non-linear fit is used for the two main parasitic capacitances. Described the structure and implementation of the model. Compared with the traditional method, all the parameters in the modeling process are based on the data manual without additional experiments and tests, which greatly reduces the modeling difficulty. Double pulse test results show that the model has high accuracy.