在绝缘物上形成硅晶层的SOI(绝缘体上的硅)工艺是将来诸如三维电路之类的超大规模集成电路的基础技术。除此而外,还打算把它用于显示仪等的器件的薄膜晶体管(TFT)制作工艺,以及用于改善CMOS和太阳能电池等以往半导体器件等方面。 目前,研究开发的重点虽然在于绝缘膜上的晶体生长技术,但也在进行试制简 The SOI (Silicon on Insulator) process of forming a silicon layer on an insulator is a fundamental technology in the future for very large scale integrated circuits such as three-dimensional circuits. In addition, it is also intended to be used in thin film transistor (TFT) fabrication processes for devices such as displays, as well as for improvements in conventional semiconductor devices such as CMOSs ​​and solar cells. At present, the focus of research and development, although the crystal growth in the insulating film technology, but also in the trial of Jane