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采用边界元法对非穿通情况ＦＰＪＴＥ结构的特性进行了分析计算，发现击穿电压与注入剂量及界面电荷呈线性关系，场板对界面电荷敏感性有抑制作用。
The boundary element method is used to analyze the characteristics of FP-JTE structure in non-through mode. It is found that there is a linear relationship between the breakdown voltage and the injected dose and interfacial charge, and the field plate has an inhibitory effect on interfacial charge sensitivity.