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6月19日,国家发改委文件批复,同意中国科学院半导体技术工程化研究平台建设项目的可行性研究报告,批准项目建设地点为廊坊市经济技术开发区科技谷园区,可进入项目设计和实施阶段,三年内完成建设。半导体技术工程化研究平台项目总建筑面积24343平方米,总投资13540万元,其中国家安排投资6600万元。建设内容包括半导体材料工程化平台、光电子器件工程化平台、半导体集成技术公共研发平台、半导体芯片及系统工程化平台等试验和研究平台及相关辅助设施的建设。半导体技术工程化研究平台建成后,将为国家提供急需的高性能半导体材料、光电器件、光电系统等先进工程化技术,推动我国在半导体优质材料、半导
On June 19, the NDRC approved the document and approved the feasibility study report of the construction project of semiconductor technology engineering research platform of Chinese Academy of Sciences. It approved the construction site of the project to be the technology valley park of Langfang Economic and Technological Development Zone and entered the stage of project design and implementation, Three years to complete the construction. The project of semiconductor technology engineering research has a total construction area of 24,343 square meters with a total investment of 135.4 million yuan, of which 66 million yuan is invested by the state. Construction includes semiconductor material engineering platform, optoelectronic device engineering platform, semiconductor integrated technology public R & D platform, semiconductor chip and system engineering platform and other test and research platform and related auxiliary facilities. After the completion of the semiconductor technology engineering research platform, it will provide the country with much-needed high-performance semiconductor materials, optoelectronic devices, optoelectronic systems and other advanced engineering technologies to promote China’s high-quality semiconductor materials, semiconductors