论文部分内容阅读
研制了１．５５μｍ 波段低偏振灵敏度的半导体光放大器（ＳＯＡ）．其有源区材料采用张应变和压应变交替排列的混合应变量子阱结构，由ＭＯＣＶＤ生长．张应变量子阱加强了ＴＭ 模式的增益，改善了ＳＯＡ 的偏振灵敏度．腔长为４００μｍ 的单端耦合ＳＯＡ，在１６０ｍ Ａ 偏置下，增益大于１６ｄＢ，偏振灵敏度约为１．８ｄＢ．
A semiconductor optical amplifier (SOA) with low polarization sensitivity of 1.55μm was developed. The active region of the material using tensile strain and compressive strain alternately arranged mixed strain quantum well structure by MOCVD growth. The tensile strained quantum wells enhance the TM mode gain and improve the polarization sensitivity of the SOA. A single-ended coupled SOA with a cavity length of 400μm has a gain greater than 16dB at 160m A bias and a polarization sensitivity of about 1.8dB.