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本文对,n/f 在1～5×10~5秒/厘米~3范围内,工作于 LSA(限累)模式的若干倍于耿频厚度的 n-GaAs 二极管进行了研究。研究使用了具有高阻抗短路传输线的电路,以便缩小二极管谐振电子并联电容。把计算机模拟与实验结果进行了比较,表明这种二极管工作于非正弦的 LSA 弛豫模式,这种模式呈现好的效率、有效的空间电荷控制和迅速建立振荡的特性。给出了计算机程序的细节。提出了一种简单的分析方法,它确定了控制电压波形的电感和电容的时间常数,并解释了频率随偏压调谐和有效的空间电荷控制现象。这一分析对振荡器的设计是适用的。
In this paper, n / Ga n-GaAs diodes operating at several times the Gα frequency in LSA mode have been studied in the range of 1 ~ 5 × 10 ~ 5 sec / cm ~ 3. The study used a circuit with a high-impedance short-circuit transmission line to reduce the diode resonant electronic shunt capacitance. Comparisons between computer simulations and experimental results show that this diode operates in a non-sinusoidal LSA relaxation mode that exhibits good efficiency, efficient space charge control, and rapid oscillation build-up. The details of the computer program are given. A simple analytical method is proposed that determines the time constant of the inductance and capacitance of the control voltage waveform and explains the frequency tuning with space-voltage and the effective space charge control. This analysis is suitable for oscillator design.