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本文提出了一个改进的二维离子注入模型.对于在任意形状掩蔽边界下的离子注入分布,我们在纵向采用联结的半高斯分布或修改过的Pearson-IV分布,在横向采用余误差函数分布,并且考虑了在多层掩蔽情况下各种材料阻止本领的不同.利用这一模型发展起来的离子注入模拟器能连续计算多次不同能量、剂量和杂质类型的注入分布,并考虑了多种不同掩蔽边界的影响.通过与其它工艺模拟器的比较,表明我们的模拟器在精度和功能上都有明显的改进.
In this paper, an improved two-dimensional ion implantation model is proposed. For the ion implantation distribution under any shape mask boundary, we adopt the coupled semi-Gaussian distribution or the modified Pearson-IV distribution in the longitudinal direction and the residual error distribution in the horizontal direction, Considering the barrier ability of various materials in the case of multi-layer masking, the ion implantation simulator developed by this model can continuously calculate the injection distribution of many different energy, dose and impurity types and take into account many different The effect of masking boundaries was compared with other process simulators to show that our simulators have significant improvements in accuracy and functionality.