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本文报道了用低压－金属有机化学气相淀积（ＬＰ－ＭＯＣＶＤ）方法制作１．３μｍ应变补偿多量子阱结构材料．Ｘ射线双晶衍射摇摆曲线可清晰地看到±４级卫星峰和卫星峰间的Ｐｅｎｄｅｌ－ｌｏｓｏｎｇ条纹．整个有源区的平均应变量几乎为零．用掩埋异质结（ＢＨ）条形工艺制备的含一级光栅的ＤＦＢ激光器室温下阈值电流２～４ｍＡ，外量子效率０．３３ｍＷ／ｍＡ，线性输出光功率达３０ｍＷ，边模抑制比（ＳＭＳＲ）大于３５ｄＢ．２０～４０℃下的特征温度Ｔ０为６７Ｋ．
This paper reports the fabrication of 1.3μm strain compensated multi-quantum well structure materials by low pressure-metal organic chemical vapor deposition (LP-MOCVD). X-ray twin crystal diffraction rocking curve can clearly see ± 4 satellite peaks and satellite peaks Pendel-losong stripes. The average amount of strain in the entire active area is almost zero. DFB lasers with one-order gratings prepared by buried heterostructure (BH) strip technology have threshold current of 2-4 mA, external quantum efficiency of 0.33 mW / mA and linear output power of 30 mW at room temperature. The side mode suppression ratio (SMSR ) Is greater than 35dB. The characteristic temperature T0 at 20-40 ° C is 67K.