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设计制造了具有负离子功能的稀土-半导体氧化物组装材料,并进行了自由基的测试。测试表明,该材料不仅在紫外光照射条件下能产生大量活性氧自由基,而且在无光照条件下也能产生大量活性氧自由基,突破了常规半导体氧化物不能在可见光条件下催化的难点。同时表明,材料所产生的自由基量与负离子量有直接对应关系。这意味着,在稀土离子的光催化及变价的氧化-还原过程中存在羟基自由基转化为负离子的可能。依此提出了在光催化作用下稀土离子与材料表面吸附的H2O和O2的循环变化模型图。
Design and manufacture of anion-functional rare earth - semiconductor oxide assembly materials, and conducted a free radical test. The test shows that the material can not only generate a large amount of reactive oxygen species under ultraviolet light irradiation but also generate a large amount of reactive oxygen species in the absence of light, which overcomes the difficulty of conventional semiconductor oxides that can not be catalyzed under visible light conditions. At the same time shows that the amount of free radicals generated by the material has a direct correspondence with the amount of negative ions. This means that in the photocatalytic rare earth ions and the price of the oxidation-reduction process there is the possibility of hydroxyl radicals into negative ions. Based on this, the model of cyclic changes of H2O and O2 adsorbed by rare earth ions on the surface of the material under photocatalysis was proposed.